가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 2SB1201S-E | 0 | 2632 | 22h | ||||||||
| Component Stockers USA | 2SB1201S-E | 6,769 | >1wk | |||||||||
| Win Source | WS-2SB1201S-E | 11,500 | 130 | 21h | ||||||||
| Worldway Electronics | 2SB1201S-E | 26,429 | 7 | Bulk | 20h | |||||||
| Esaler Electronic | 2SB1201S-E | 563 | 11h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-05
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
관련 부품
onsemi2SB1201T-TL-E
Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. ONSSPCDDENY1E7M;
onsemi2SB1202T-TL-E
Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. ONSSPCDDENY1E7M;
onsemi2SB1203S-TL-E
Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. ONSSPCDDENY1E7M;
Toshiba2SA2097(TE16L1,NQ)
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
설명
유통업체에서 제공한 onsemi 2SB1201S-E에 대한 설명입니다.
Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
50V 15W 2A 140@100mA2V 150MHz PNP 150mV@1A50mA +150¡Í@(Tj) IP Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 50V 2A 800mW 3-Pin(3+Tab) TP Bag
Bipolar Transistors - BJT BIP PNP 2A 50V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
Number of Pins3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Emitter Base Voltage (VEBO)-6 V
hFE Min100
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
PackagingBulk
PolarityPNP
Transition Frequency150 MHz