This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.
BIPOLAR TRANSISTOR, NPN, 100V; Transisto; BIPOLAR TRANSISTOR, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:625mW; DC Collector Current:1.5A; DC Current Gain hFE:10000