공급망
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-10-08
Lifecycle StatusEOL (Last Updated: 1 day ago)
LTB Date2025-09-12
LTD Date2026-03-12
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
관련 부품
Diodes Inc.2N7002VC-7
2N7002VC Series 60 V 280 mA 7.5 Ohm Dual N-Ch Enhancement Mode Mosfet - SOT-563
설명
유통업체에서 제공한 onsemi 2N7002V에 대한 설명입니다.
N-Channel MOSFET, Enhancement Mode, 60V, 0.28A, 2Ω
MOSFET, DUAL N CH, 60V, 1.6OHM, 280mA, S
SOT563F, 60V Dual NCh Enhancement Mode Field Effect Transist
Trans MOSFET N-CH 60V 0.28A 6-Pin SOT-563F T/R
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 60V 5.0 Ohm Sot323 Rohs Compliant: Yes
onsemi NMOS, Vds=60 V, 280 mA, SOT-563, , 6
MOSFET, DUAL N CH, 60V, 280MA, SOT563F-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:280mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.76V; Power Dissipation Pd:250mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-523F; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-563
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight32 mg
Technical
Continuous Drain Current (ID)280 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1.76 V
Number of Channels2
Number of Elements2
Power Dissipation250 mW
Rds On Max7.5 Ω
Resistance7.5 Ω
Schedule B8541210080
Threshold Voltage1.76 V
Turn-Off Delay Time12.5 ns
Turn-On Delay Time5.85 ns
Dimensions
Height600 µm
Length1.7 mm
Width1.2 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책