공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-03-14
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 onsemi 2N7000BU에 대한 설명입니다.
N-Channel 60 V 5 Ohm Through Hole Advanced Small Signal Mosfet - TO-92
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk
Avnet Japan
400mW(Ta) 20V 3V@1mA 1N 60V 5¦¸@ 500mA,10V 200mA 50pF@25V TO-92-3 5.2mm*4.19mm*5.33mm
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, N-CH, 60V, 0.2A, TO-226AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.9V; P
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation400 mW
Rds On Max5 Ω
Resistance5 Ω
Rise Time10 ns
Schedule B8541210080
Threshold Voltage3.9 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height5.33 mm