공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-04-02
LTD Date2024-10-02
설명
유통업체에서 제공한 onsemi 2N5551YTA에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
160V 625mW 180@10mA,5V 600mA NPN TO-92-3 Bipolar (BJT) ROHS
AMP GP NPN 160V 600MA TO-92
TRANS NPN 160V 600MA TO92-3
QUAD 2 INPUT NAND GATE (S.O.)
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product100 MHz
hFE Min30
Max Collector Current600 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Transition Frequency100 MHz
Voltage Rating (DC)160 V
Dimensions
Height8.77 mm