공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1987-01-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2006-12-31
LTD Date2007-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi 2N5458에 대한 설명입니다.
High Current PNP Bipolar Transistor, TO-92. ONSSPCTRNSTSK7C1K;
This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:25V; Zero Gate Voltage Drain Current Idss:2mA to 9mA; Gate-Source Cutoff Voltage Vgs(off) Max:7V; Power Dissipation Pd:625mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Idss Max:9mA; Current Idss Min:2mA; Package / Case:TO-92; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:9mA; Power Dissipation, Pd:0.625W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-25V ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Breakdown Voltage-25 V
Continuous Drain Current (ID)9 mA
Current Rating10 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Voltage (Vds)25 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)-25 V
Input Capacitance7 pF
Max Junction Temperature (Tj)135 °C
Max Operating Temperature125 °C
Max Power Dissipation310 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation310 mW
Voltage Rating (DC)25 V
Dimensions
Height7.87 mm