onsemi 2N3859A
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiKSP2222ABU
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
설명
유통업체에서 제공한 onsemi 2N3859A에 대한 설명입니다.
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 1mA 1V 500nA ICBO 625mW 250MHz
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BIPOLAR TRANSISTOR, NPN, 60V, TO-92; Tra
TRANS GP BJT NPN 60V 0.5A 3PIN TO-92
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Transition Frequency Typ, ft:250MHz; Power Dissipation, Pd:625mW; DC Collector Current:500mA; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
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- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
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- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Voltage (VCEO)60 V
Current Rating500 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Collector Current100 mA
Max Operating Temperature125 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Transition Frequency90 MHz
Voltage Rating (DC)60 V