공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-02-18
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
NXP SemiconductorsBUK7619-100B,118
Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsBUK9E6R1-100E,127
Trans MOSFET N-CH 100V 120A Automotive AEC-Q101 3-Pin(3+Tab) I2PAK Rail
설명
유통업체에서 제공한 NXP Semiconductors PSMN7R8-120ESQ에 대한 설명입니다.
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
Trans MOSFET N-CH 120V 70A 3-Pin(3+Tab) I2PAK Rail
MOSFET N-channel 120 V 7.9 mo FET
Power Field-Effect Transistor, 70A I(D), 120V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
POWER FIELD-EFFECT TRANSISTOR, 7
NEXPERIA PSMN7R8-120ESQ - 70A, 1
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageTO-262
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight2.387001 g
Technical
Continuous Drain Current (ID)70 A
Drain to Source Breakdown Voltage120 V
Drain to Source Resistance7.9 mΩ
Drain to Source Voltage (Vdss)120 V
Element ConfigurationSingle
Fall Time60.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.473 nF
Max Dual Supply Voltage120 V
Max Operating Temperature175 °C
Max Power Dissipation349 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max7.9 mΩ
Rise Time55.3 ns
Turn-Off Delay Time151.8 ns
Turn-On Delay Time45.5 ns