NXP Semiconductors PBSS8110Y

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon

TRANSISTOR, NPN, SOT-363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:290mW; DC Collector Current:1A; DC Current Gain hFE:150hFE; Transistor Case Styl

TRANSISTOR, NPN, SOT-363; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:40mV; Power Dissipation:290mW; Min Hfe:80; ft, Typ:100MHz; ;RoHS Compliant: Yes

TRANSISTOR, NPN, SOT-363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 290mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 40mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1A; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 430mW; Power Dissipation per device Max: 290mW; SMD Marking: 81; Voltage Vcbo: 120V