공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-29
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 NXP Semiconductors PBSS8110T에 대한 설명입니다.
Bipolar (Bjt) Single Transistor, Npn, 100 V, 300 Mw, 1 A, 150
100 V, 1 A NPN low VCEsat transistor Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 100V 1A 3-Pin TO-236AB
1000 mA 100 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage120 mV
Collector Emitter Voltage (VCEO)100 V
Current1 A
Emitter Base Voltage (VEBO)5 V
hFE Min80
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation480 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation300 mW
Transition Frequency100 MHz
Voltage100 V
Dimensions
Height1.1 mm