공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2015-06-30
LTD Date2015-09-30
설명
유통업체에서 제공한 NXP Semiconductors NX3008PBKT,115에 대한 설명입니다.
MOSFET Transistor, P Channel, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
P-Channel 30 V 4.1 Ohm 0.52 nC Surface Mount Trench Mosfet - SC-75
Trans MOSFET P-CH 30V 0.2A Automotive 3-Pin SC-75 T/R
250mW(Ta),770mW(Tc) 1.1V@ 250¦ÌA 0.72nC@ 4.5 V 1P 30V 4.1¦¸@ 200mA,4.5V 46pF@15V SC-75
Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Resistance4.1 Ω
Drain to Source Voltage (Vdss)-30 V
Fall Time38 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance46 pF
Max Dual Supply Voltage-30 V
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation300 mW
Rds On Max4.1 Ω
Rise Time30 ns
Turn-Off Delay Time65 ns
Turn-On Delay Time19 ns