공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-12-31
관련 부품
onsemiKSA1175YBU
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 250mW 180MHz
onsemiFJNS3215RBU
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJNS3201RTA
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92S
설명
유통업체에서 제공한 NXP Semiconductors MPS3906,126에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
100 mA 40 V PNP Si SMALL SIGNAL TRANSISTOR TO-92
Trans GP BJT PNP 40V 0.1A 500mW 3-Pin TO-92 Ammo
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageTO-226-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)40 V
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Number of Elements1
PackagingCut Tape (CT)
Transition Frequency150 MHz