공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2008-01-29
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2016-03-31
LTD Date2016-06-30
관련 부품
NXP SemiconductorsBLF7G27L-150P,112
Tray LDMOS (Dual) Common Source ROHS3Compliant RF Mosfet 1.2A 30W 16.5dB 2.5GHz~2.7GHz
NXP SemiconductorsBLF6G38-100,112
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsBLF7G24L-100,112
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 NXP Semiconductors BLF6G20-110,112에 대한 설명입니다.
Trans MOSFET N-CH 65V 29A 3-Pin LDMOST Blister
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
IC BASESTATION FINAL SOT502A
SOT-502A MOSFETs ROHS
RF TRANSISTOR
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Body MaterialCeramic
MountScrew
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)29 A
Current Rating29 A
Drain to Source Breakdown Voltage65 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)65 V
Element ConfigurationSingle
Frequency1.99 GHz
Gain19 dB
Gate to Source Voltage (Vgs)13 V
Max Frequency2 GHz
Max Operating Temperature225 °C
Max Output Power25 W
Min Breakdown Voltage65 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power25 W
Test Current900 mA
Test Voltage28 V
Voltage Rating65 V