공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-03
Lifecycle StatusObsolete (Last Updated: 9 months ago)
설명
유통업체에서 제공한 NTE Electronics 2N3019에 대한 설명입니다.
Transistor NPN Silicon 80V IC=1A TO-39 Case High Current High Frequency Amplifier High Gain
NTE Electronics
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
500mV@ 500mA,50mA NPN 800mW 7V 10nA 140V 80V 1A TO-39 TH 6.35mm H
Trans GP BJT NPN 80V 1A 3-Pin TO-5
BIPOLAR TRANSISTOR, NPN, 80V; Transistor; BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:400MHz; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; No. of Pins:3Pins; MSL:-
제조업체 별칭
NTE Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NTE Electronics는 다음 이름으로도 알려져 있습니다:
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
기술 사양
Physical
Body MaterialMetal
Case/PackageTO-39
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
hFE Min15
Max Collector Current1 A
Max Operating Temperature200 °C
Max Power Dissipation800 mW
Number of Elements1
PolarityNPN
Power Dissipation5 W
Transition Frequency400 MHz
Voltage Rating (DC)140 V