가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | PSMN6R1-25MLDX | 91 | 9h | |||||||||
| DigiKey | 1727-2504-1-ND | 539 | 1 | Cut Tape | ||||||||
| TME | PSMN6R1-25MLDX | 0 | 1 | 1d | ||||||||
| Newark | PSMN6R1-25MLDX | 0 | 1 | Cut Tape | ||||||||
| Avnet | PSMN6R1-25MLDX | 0 | 4500 | 11h |
공급망
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
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Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.2A Ta 73A Tc 13.6A 2W 25V
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Tube Surface Mount N-Channel Single Mosfet Transistor 9.7A Ta 75A Tc 75A 74.4W 18.4ns
설명
유통업체에서 제공한 Nexperia PSMN6R1-25MLDX에 대한 설명입니다.
N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology
MOSFET N-CH 25V 60A LFPAK33 / N-Channel 25 V 60A (Tc) 42W (Tc) Surface Mount LFPAK33
Trans MOSFET N-CH 25V 60A 8-Pin SOT-1210 T/R
MOSFET, N-CH, 25V, 60A, SOT-1210-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.00646ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.76V; Power Dissipation Pd: 42W; Transistor Case Style: SOT-1210; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Terminals4
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance10.3 mΩ
Drain to Source Voltage (Vdss)25 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance702 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation42 W
Rds On Max7.24 mΩ
Schedule B8541290080
Turn-Off Delay Time7.8 ns
Turn-On Delay Time7.7 ns
Dimensions
Height1 mm