공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-04
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
설명
유통업체에서 제공한 Nexperia PSMN020-30MLCX에 대한 설명입니다.
N-channel 30 V 18.1 mOhm logic level MOSFET in LFPAK33 using TrenchMOS Technology
Power Field-Effect Transistor, 31.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 31.8A, LFPAK33; Transistor Polarity:N Channel; Continuous Drain Current Id:31.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0205ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.62V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOT-1210; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT
Contact PlatingTin
Number of Terminals4
Technical
Continuous Drain Current (ID)31.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance430 pF
Max Dual Supply Voltage30 V
Max Operating Temperature175 °C
Max Power Dissipation33 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max18.1 mΩ
Rise Time7.2 ns
Threshold Voltage1.62 V
Turn-Off Delay Time10.1 ns
Turn-On Delay Time6.1 ns