공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-02-01
Lifecycle StatusEOL (Last Updated: 5 years ago)
LTB Date2020-12-31
LTD Date2021-06-30
Manufacturer Lifecycle StatusDISCONTINUATION OF DELIVERY (Last Updated: 5 years ago)
관련 부품
onsemiNTJS4405NT1G
NTJS4405N: Small Signal MOSFET 25V 1.2A 350 mOhm Single N-Channel SC-88/SC70-6/SOT-363
onsemiNVJS4405NT1G
Single N-Channel Small Signal MOSFET 25V, 1.2A, 350mΩ Automotive Version of the NTJS4405N
Diodes Inc.DMC2700UDM-7
Mosfet Bvdss: 8V-24V Sot26 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMC2700UDM-7
InfineonBSD840NH6327XTSA1
Mosfet, N-Ch, 20V, 0.88A, Sot-363 Rohs Compliant: Yes |Infineon Technologies BSD840NH6327XTSA1
Diodes Inc.DMG1012UW-7
N-Channel 20 V 1 A 0.45 O Surface Mount Enhancement Mode Power MosFet - SOT-323
설명
유통업체에서 제공한 Nexperia PMZB290UNE,315에 대한 설명입니다.
PMZB290UNE Series 20 V 1 A Single N-Channel Trench MOSFET - DFN1006B-3
Trans MOSFET N-CH 20V 1A 3-Pin SOT-883B T/R
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 20V, 1A, SOT883B
MOSFET, N-CH, 20V, 1A, SOT883B; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 750mV; Powe
Mosfet, N Channel, 20V, 1A, Sot883B; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:1A; Tensión Drenaje-Fuente Vds:20V; Resistencia De Activación Rds(On):0.29Ohm; Tensión Vgs De Medición Rds(On):4.5V |Nexperia PMZB290UNE,315
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance83 pF
Max Dual Supply Voltage20 V
Max Operating Temperature150 °C
Max Power Dissipation2.7 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation715 mW
Rds On Max380 mΩ
Rise Time4 ns
Schedule B8541210080
Turn-Off Delay Time86 ns
Turn-On Delay Time6 ns