공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-03-28
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
InfineonIRFTS9342TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
NXP SemiconductorsPMN38EN,135
Power Field-Effect Transistor, 5.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Nexperia PMN30UNX에 대한 설명입니다.
MOSFET Devices; NEXPERIA; PMN30UNX; 30 V; 4.5 A; 12 V; 530 mW
Trans MOSFET N-CH 30V 5.7A 6-Pin SOT-457 T/R
Power Field-Effect Transistor, 4.5A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
530mW(Ta)，4.46W(Tc) 12V 900mV@ 250µA 12nC@ 4.5 V 1individualNChannel 30V 40mΩ@ 4.5A,4.5V 4.5A 635pF@15V TSOP-6 SMD mount 1mm(height)
ELITE PROGRAM PART - PMN30UN/SOT457/SC-74
MOSFET, N-CH, 30V, 4.5A, SOT-457-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 650mV; Power Dissipation Pd: 530mW; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageTSOP
Contact PlatingTin
MountSurface Mount
Number of Terminals6
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance635 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation4.46 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation530 mW
Rds On Max40 mΩ
Schedule B8541290080
Turn-Off Delay Time34 ns
Turn-On Delay Time9 ns
Dimensions
Height1.1 mm