공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
onsemiFJX3001RTF
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323
onsemiFJX3003RTF
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323
Diodes Inc.DDTC123JUA-7-F
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm
Diodes Inc.DDTC143FUA-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJX3007RTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.DDTC124EUA-7-F
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Nexperia PDTC114EU,115에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
PDTC114EU Series 50 V 100 mA SMT NPN Resistor-Equipped Transistor - SOT-323
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SC-70 T/R
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
NPN - Pre-Biased 200mW 100mA 50V SOT-323(SC-70) Digital Transistors ROHS
Transistor Polarity:NPN; Continuous Collector Current:100mA; Transistor Mounting:Surface Mount; Power Dissipation:200mW; Operating Temperature Max:150°C; DC Current Gain hFE Min:30hFE; Product Range:-; Qualification:- RoHS Compliant: Yes
TRANSISTOR, DIGITAL, SOT-323; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resisto
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)50 V
Current1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min30
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage50 V
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency230 MHz
Voltage50 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책