Nexperia PBRP113ET,215

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Trans Digital BJT PNP 40V 600mA Automotive 3-Pin TO-236AB T/R

One PNP - Pre-Biased 250mW 600mA 40V SOT-23 Digital Transistors ROHS

750mV@ 6mA,600mA PNP - Pre-Biased 570W 500nA 40V 600mA TO-236AB 3mm*1.4mm*1mm

600 mA 40 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -40V; Continuous Collector Current Ic: -800mA; Base Input Resistor R1: 1kohm; Base-Emitter Resistor R2: 1kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: PBRP113E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); DC Collector Current: -600mA; DC Current Gain hFE: 210hFE; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 250mW; Transistor Case Style: SOT-23; Transistor Polarity: PNP