유통업체에서 제공한 Nexperia PBHV8115Z,115에 대한 설명입니다.
Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
150 V, 1 A NPN high-voltage low VCEsat transistor
Trans GP BJT NPN 150V 1A 4-Pin(3+Tab) SOT-223 T/R
Avnet Japan
General Purpose Transistors NPN Ic=1A Vceo=150V hfe=10 P=1.4W SOT223
TRANSISTOR,NPN,1A,150V,SOT223, REEL
150V 700mW 1A 50@500mA10V 30MHz 400mV@100mA10mA NPN +150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
350mV@ 200mA,1A NPN 1.4W 6V 100nA 400V 150V 1A SOT-223 1.7mm
NEXPERIA - PBHV8115Z,115 - Bipolarer Einzeltransistor (BJT), NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
TRANSISTOR,NPN,1A,150V,SOT223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 700mW; DC Collector Current: 1A; DC Current Gain hFE: 250hFE; Transistor