공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1988-01-11
Lifecycle StatusProduction (Last Updated: 1 month ago)
설명
유통업체에서 제공한 Nexperia BC847C에 대한 설명입니다.
45V 200mW 420@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
45 V, 100 MA NPN GENERAL-PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
NPN Transistor 400mV@5mA 100mA 250mW 6V 15nA 50V 45V 100mA
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23
Transistor, Npn Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:45V; Transition Frequency Ft:-; Power Dissipation Pd:250Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:110Hfe; Transistor Case Style:Sot-23; No. |Nexperia BC847C.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 520 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountReverse
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)45 V
Current1 A
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product100 MHz
hFE Min420
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm