공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-10
Lifecycle StatusProduction (Last Updated: 1 month ago)
설명
유통업체에서 제공한 Nexperia 2N7002PV에 대한 설명입니다.
Power Field-Effect Transistor, 0.35A I(D), 60V, 1.6ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
350 mA 60 V 2 CHANNEL N-CHANNEL Si SMALL SIGNAL MOSFET
MOSFET, NN CH, 60V, 0.35A, SOT666; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.75V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:350mA; Drain Source Voltage Vds:60V; Module Configuration:Dual N Channel; On Resistance Rds(on):1ohm; Power Dissipation Pd:500mW
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT-666
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)350 mA
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vds)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance30 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingCut Tape
Threshold Voltage1.75 V
Turn-Off Delay Time10 ns
Turn-On Delay Time3 ns
Dimensions
Height600 µm
Length1.7 mm
Width1.3 mm