MOSFET, NN CH, 60V, 0.3A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:295mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Continuous Drain Current Id, N Channel:300mA; Drain Source Voltage Vds, N Channel:60V; Module Configuration:Dual N Channel; On Resistance Rds(on), N Channel:1.3ohm; Power Dissipation Pd:295mW