가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | TN2130K1-G | 2,910 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | TN2130K1-G | 1 | 1K | Bulk | ||||||||
| Master Electronics | TN2130K1-G | 1 | 1K | |||||||||
| DigiKey | TN2130K1-GCT-ND | 1,000 | 1 | Cut Tape | ||||||||
| TME | TN2130K1-G | 0 | 3K | 19h |
공급망
Projected EOL Date2034-11-18
Country of AssemblyThailand
Country of FabricationUnited States of America
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.0095
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusREL (Last Updated: 1 day ago)
관련 부품
Diodes Inc.BSS138Q-7-F
Single N-Channel 50 V 3.5 Ohm 300 mW Silicon Surface Mount Mosfet - SOT-23
InfineonBSS138NH6433XTMA1
Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount
onsemiMVMBF0201NLT1G
Single N-Channel Power MOSFET 20V, 300mA, 1Ω 20V 300mA 1 Ohm Single N-Channel SOT-23 Logic Level
설명
유통업체에서 제공한 Microchip TN2130K1-G에 대한 설명입니다.
Mosfet, N-Channel Enhancement-Mode, 300V, 25 Ohm Rohs Compliant: Yes
Trans MOSFET N-CH Si 300V 0.085A 3-Pin SOT-23 T/R
MOSFET N-CH 300V 0.085A SOT23-3
Enhancement-Mode N-Channel, 25Ω, 2.4V, SOT-23-3, RoHS
Microchip SCT
场效应管, MOSFET, N沟道, 300V, 0.085A, TO-236AB;
Microchip NMOS, Vds=300 V, SOT-23
SOT-23-3 Pre-ordered MCUs ROHS
제조업체 별칭
Microchip에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Microchip는 다음 이름으로도 알려져 있습니다:
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)85 mA
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance25 Ω
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
HS Code8541.29.0055, 8541.29.0095
Input Capacitance50 pF
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation360 mW
Rds On Max25 Ω
Rise Time7 ns
Schedule B8541210080
Turn-Off Delay Time12 ns
Turn-On Delay Time10 ns
Dimensions
Height950 µm
Length2.9 mm
Width1.3 mm