가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DN3135N8-G | 1,256 | 1 | Cut Tape | ||||||||
| Arrow Electronics | DN3135N8-G | 2,000 | 2K | |||||||||
| Onlinecomponents.com | DN3135N8-G | 12,000 | 500 | Bulk | ||||||||
| Master Electronics | DN3135N8-G | 12,000 | 500 | |||||||||
| DigiKey | DN3135N8-GCT-ND | 26,260 | 1 | Cut Tape |
공급망
Projected EOL Date2034-05-27
Country of AssemblyChina, Taiwan
Country of FabricationUnited States of America
Country of OriginChina, Taiwan
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.0095
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusREL (Last Updated: 1 day ago)
관련 부품
Diodes Inc.ZXMN10A07ZTA
ZXMN10A07Z Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET - SOT-89
Diodes Inc.ZXMN6A11ZTA
ZXMN6A11Z Series 60 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-89
onsemiPCP1405-TD-H
MOSFET N-CH 250V 0.6A SOT89 / Trans MOSFET N-CH 250V 0.6A 4-Pin(3+Tab) SOT-89 T/R
설명
유통업체에서 제공한 Microchip DN3135N8-G에 대한 설명입니다.
Trans MOSFET N-CH Si 350V 0.135A 4-Pin(3+Tab) SOT-89 T/R
1.3W(Ta) 20V 20nC 1N 350V 35¦¸@ 150mA,0V 135mA 120pF@25V SOT-89,TO-243AA 4.6mm*2.6mm*1.6mm
DN3135 Series 350 V 135 mA N-Channel Depletion-Mode Vertical DMOS FET - SOT-89-3
제조업체 별칭
Microchip에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Microchip는 다음 이름으로도 알려져 있습니다:
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
기술 사양
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins3
Weight52.786812 mg
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)135 mA
Current135 A
Drain to Source Breakdown Voltage350 V
Drain to Source Resistance35 Ω
Drain to Source Voltage (Vdss)350 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
HS Code8541.29.0055, 8541.29.0095
Input Capacitance120 pF
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.3 W
Rds On Max35 Ω
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Voltage350 V
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm