공급망
Projected EOL Date2044-04-30
Country of AssemblyPhilippines
Country of FabricationJapan, Taiwan, United States of America
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.0095
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusREL (Last Updated: 1 day ago)
관련 부품
LittelfuseIXXN200N60B3
Planar Series - 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs, SOT-227B, RoHS
설명
유통업체에서 제공한 Microchip APT60GA60JD60에 대한 설명입니다.
IGBT MOD 600V 112A 356W ISOTOP / IGBT Module PT Single 600 V 112 A 356 W Chassis Mount ISOTOP®
Trans IGBT Module N-CH 600V 112A 356W 4-Pin SOT-227 Tube
IGBT Module N-Channel 600V 112A 30V SOT-227 Screw Mount
IGBT PT MOS 8 Combi 600 V 60 A SOT-227
Insulated Gate Bipolar Transistor, 112A I(C), 600V V(BR)CES, N-Channel
IGBT MOD 600V 112A 356W ISOTOP
제조업체 별칭
Microchip에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Microchip는 다음 이름으로도 알려져 있습니다:
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
기술 사양
Physical
MountChassis Mount, Screw
Number of Pins4
Weight30.000004 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
HS Code8541.29.0055, 8541.29.0095
InputStandard
Input Capacitance8.01 nF
Max Collector Current112 A
Max Operating Temperature150 °C
Max Power Dissipation356 W
Min Operating Temperature-55 °C
NTC ThermistorNo
Schedule B8541290080
Dimensions
Height9.6 mm
Length38.2 mm
Width25.4 mm