공급망
Projected EOL Date2044-04-30
Country of AssemblyPhilippines
Country of FabricationMalaysia, Taiwan, United States of America
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.0095
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusREL (Last Updated: 1 day ago)
관련 부품
RenesasRJH60F5DPQ-A0#T0
IGBT 600V 80A 260.4W TO247A / IGBT Trench 600 V 80 A 260.4 W Through Hole TO-247A
InfineonIRGP4069-EPBF
Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AD
설명
유통업체에서 제공한 Microchip APT50GN60BDQ2G에 대한 설명입니다.
APT50GN60Bx Series 600 V 107 A Trench and Field Stop IGBT - TO-247-3
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
IGBT TRENCH FS 600V 107A TO247
DIODE ARRAY SCHOTTKY 30V TO220AB
제조업체 별칭
Microchip에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Microchip는 다음 이름으로도 알려져 있습니다:
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
기술 사양
Physical
MountThrough Hole
Number of Pins3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current107 A
Current Rating107 A
Element ConfigurationSingle
HS Code8541.29.0055, 8541.29.0095
Max Collector Current107 A
Max Operating Temperature175 °C
Max Power Dissipation366 W
Min Operating Temperature-55 °C
Schedule B8541290080
Turn-Off Delay Time230 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)600 V
Dimensions
Height5.31 mm
Length21.46 mm
Width16.26 mm