공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2023-11-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
엔지니어링 리소스
MACOM CGH40010P의 평가 키트와 참조 설계를 확인하세요.
설명
유통업체에서 제공한 MACOM CGH40010P에 대한 설명입니다.
RF MOSFET HEMT 28V 440196 / RF Mosfet HEMT 28 V 200 mA 0Hz ~ 6GHz 14.5dB 12.5W 440196
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
Aerospace & Defense, 28 V, 6 GHz, 10W, Pill, RoHS
Wolfspeed SCT
Trans RF MOSFET N-CH 120V 1.5A 3-Pin Case 440196
RF Power Field-Effect Transistor
제조업체 별칭
MACOM에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. MACOM는 다음 이름으로도 알려져 있습니다:
- MACOM Technology Solutions
- M/A COMM
- TYCO M/A-COM
- MACOM Technology Solutions Inc
- PICO MACOM
- M/A COM INC
- MNDSPEED
- M/A-COMO
- M/A-COM TECH SOLUTIONS
- Metelics (MACOM Technology Solutions)
- MACOM TECHNOLOGY
- TE/MACOM
- Omni Spectra / M/A-Com
- M/A-COM LTD
- M/A-COM Technology Soluti
- M/A-Com (Tyco - M/A-Com)
- MINDSPEED
- MACOM / SPECTRA
- MACOM/MINDSPEED
- M/A COM INTEGRATED
- MACOM (Metelics)
- MindspeedTechnologies
- MACOM Datasheet
- COBHAM PLC
- MICROMETRICS INC
- MA-COM
기술 사양
Physical
Body MaterialCeramic
Number of Terminals2
Technical
Continuous Drain Current (ID)1.5 A
Drain to Source Breakdown Voltage84 V
Drain to Source Voltage (Vdss)120 V
Efficiency65 %
Gain14 dB
Gate to Source Voltage (Vgs)-10 V
Max Frequency6 GHz
Max Junction Temperature (Tj)225 °C
Max Operating Temperature105 °C
Max Output Power10 W
Min Breakdown Voltage120 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Output Power12.5 W
Power Dissipation14 W
Test Current200 mA
Test Voltage28 V
Voltage Rating28 V
Dimensions
Height3.17 mm