가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IXFX32N100P-ND | 269 | 1 | Tube | ||||||||
| TME | IXFX32N100P | 0 | 1 | 1h | ||||||||
| TTI | IXFX32N100P | 0 | 30 | Tube | 6h | |||||||
| Newark | IXFX32N100P | 0 | 30 | |||||||||
| Onlinecomponents.com | IXFX32N100P | 0 | 5 | Bulk |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-14
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW25N80K5
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
STMicroelectronicsSTWA40N95K5
N-channel 950 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package
설명
유통업체에서 제공한 Littelfuse IXFX32N100P에 대한 설명입니다.
Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFX32N100P
MOSFET N-CH 1000V 32A PLUS247-3
Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
960W(Tc) 30V 6.5V@1mA 225nC@ 10 V 1N 1KV 320m¦¸@ 16A,10V 32A 14.2nF@25V TO-247-3 16.13mm*5.21mm*21.34mm
Polar™ Series - 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs), PLUS247™, RoHS
Littelfuse SCT
제조업체 별칭
Littelfuse에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Littelfuse는 다음 이름으로도 알려져 있습니다:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance320 mΩ
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance14.2 nF
Max Operating Temperature150 °C
Max Power Dissipation960 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation960 W
Rds On Max320 mΩ
Reverse Recovery Time300 ns
Rise Time55 ns
Turn-Off Delay Time76 ns