공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-02-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
LittelfuseIXGT10N170
110W 20A 1.7kV NPT (non-penetrating type) TO-268AA IGBT Transistors / Modules ROHS
MicrochipAPT25GR120SD15
Igbt Mos 8 1200 V 25 A To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT25GR120SD15
설명
유통업체에서 제공한 Littelfuse IXBT6N170에 대한 설명입니다.
High Voltage Series - 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs, TO-268, RoHS
Littelfuse SCT
Disc Igbt Bimosfet-High Volt To-268Aa/ Tube |Littelfuse IXBT6N170
Insulated Gate Bipolar Transistor, 12A I(C), 1700V V(BR)CES, N-Channel, TO-268AA
Trans IGBT Chip N-CH 1700V 12A 75W 3-Pin(2+Tab) TO-268
IGBT Transistors 12 Amps 1700V 3.6 Rds
75W 2.84V 3.4V@ 15V,6A 12A TO-268AA 16.05mm*14mm*5.1mm
제조업체 별칭
Littelfuse에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Littelfuse는 다음 이름으로도 알려져 있습니다:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
기술 사양
Physical
Case/PackageTO-268
MountSurface Mount
Number of Terminals2
Weight4.500005 g
Technical
Collector Base Breakdown Voltage (VCES)1.7 kV
Collector Emitter Breakdown Voltage1.7 kV
Collector Emitter Saturation Voltage3.4 V
Collector Emitter Voltage (VCEO)1.7 kV
Continuous Collector Current12 A
Element ConfigurationSingle
Max Collector Current12 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation75 W
Reverse Recovery Time1.08 µs
Turn-Off Delay Time105 ns
Turn-On Delay Time32 ns
Dimensions
Height5.35 mm