공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.32.00.51
Introduction Date2014-02-03
Lifecycle StatusEOL (Last Updated: 4 weeks ago)
LTB Date2026-09-30
LTD Date2028-12-31
관련 부품
MicronMT29F2G08ABAEAH4-IT:E
MT29F Series 1.95 V 2 Gbit Parallel SMT FLASH - NAND Memory IC - VFBGA-63
MicronMT29F2G08ABAEAWP-IT:E
MT29F Series 3.6 V 2 Gbit Parallel SMT FLASH - NAND Memory IC - TSOP-48
MicronMT29F2G08ABAEAH4:E TR
MT29F Series 1.95 V 2 Gbit Parallel SMT FLASH - NAND Memory IC - VFBGA-63
설명
유통업체에서 제공한 Kioxia TC58NYG1S3HBAI6에 대한 설명입니다.
NAND Flash Serial 1.8V 2G-bit 256M x 8 67-Pin VFBGA
IC FLASH 2G PARALLEL 67VFBGA / NAND Flash Memory(SLC Middle Capacity)
Active BALL 2013 Parallel (Memory Format) Memory 85C 1.7V 2Gb 6.5mm
2Gb (256M x 8) 1.7V 1.95V Parallel VFBGA-67
2Gbit, generation: 24nm, VCC=1.7 to 1.95V
OPTOISO 4KV 1CH GATE DRVR 14SMT
제조업체 별칭
Kioxia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Kioxia는 다음 이름으로도 알려져 있습니다:
- Kioxia America Inc
- KIOXIA Corporation
- Kioxia America
- KIOXIA Holdings Corporation
- KIOXIA HOLDINGS CORP
- Kioxia Singapore Pte Ltd (formerly T
- Kioxia Holdings
- KIOXIA Semiconductor
- Kioxia/Toshiba
- KIOXIA EUROPE (PREV TOSHIBA)
- KIOXIA Europe GmbH
- Toshiba/Kioxia
기술 사양
Physical
Case/PackageBGA
Number of Pins67
Number of Terminals67
Technical
Access Time25 ns
Density2 Gb
InterfaceParallel, Serial
Max Operating Temperature85 °C
Max Supply Current30 mA
Max Supply Voltage1.95 V
Memory TypeEEPROM, FLASH
Min Operating Temperature-40 °C
Min Supply Voltage1.7 V
Number of Circuits1
Operating Supply Voltage1.8 V
Page Size2 kB
Temperature GradeIndustrial
Dimensions
Height - Seated (Max)1 mm
Length8 mm
Terminal Pitch800 µm
Width6.5 mm