IGBT, SINGLE, N-CH, 1.2KV, 50A, TO-268; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2.96V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-268; No.
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 3.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 300 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-268 / Pins = 3 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260