Renesas HFA3046B
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-08-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-04-01
LTD Date2011-10-01
관련 부품
onsemiMC1413BDR2G
Bipolar Transistors (BJT); MC1413BDR2G; ON SEMICONDUCTOR; NPN; 16; 50 V; 500 mA
Diodes Inc.ULN2003V12S16-13
ULN2003V12 Series 7 Channel 3.3 to 5 V Relay Inductive Load Sink Driver -SOIC-16
ROHMDTB713ZETL
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
설명
유통업체에서 제공한 Renesas HFA3046B에 대한 설명입니다.
Ultra High Frequency Transistor Arrays | RF TRANS 5 NPN 12V 8GHZ 14SOIC
RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN, MS-012AB
IC TRANSISTOR ARRAY NPN 14-SOIC
TXARRAY 3X NPN + NPN DIFF PAIR 14SOIC MIL
제조업체 별칭
Renesas에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Renesas는 다음 이름으로도 알려져 있습니다:
- Renesas Electronics
- Renesas Electronics America Inc
- Renesas Electronics America
- RENESA
- REN
- RENES
- RENESAS TECHNOLOGY CORP
- RENESAS TECHNOLOGY
- Renesas Electronics Corporation
- RENESAS ELECTRONICS CORP
- RENSAS
- RENASAS
- Renesas / Intersil
- RNS
- RENESAS-PB
- RENESASTEC
- RENESES
- Renesas Technology America
- Renesas Design Germany GmbH
- Renesas / IDT
- RENESASE
- RENESAS TECHNOLOGY HONG KONG
- Renesas Electronics Operations Services Limited
- RENEASAS
- RENESAS/M
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Terminals14
Technical
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)8 V
Current Rating65 mA
hFE Min40
Max Collector Current37 mA
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Number of Elements5
PackagingBulk
Transition Frequency8 GHz
Voltage Rating (DC)12 V