공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-11
Lifecycle StatusNRND (Last Updated: 7 months ago)
관련 부품
VishaySIHG33N60EF-GE3
MOSFET N-CH 600V 33A TO-247AC / Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
InfineonSPW24N60C3FKSA1
Trans MOSFET N-CH 650V 24.3A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 24.3A TO-247
onsemiFCH067N65S3-F155
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247
설명
유통업체에서 제공한 Infineon SPW35N60CFDFKSA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 34.1A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 34.1A TO-247
Power Field-Effect Transistor, 34.1A I(D), 600V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA
313W(Tc) 20V 5V@1.9mA 212nC@ 10 V 1individualNChannel 600V 118mΩ@ 21.6A,10V 34.1A 5.06nF@25V TO-247 Through hole mounting
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.
Mosfet, N Channel, 600V, 34.1A, To-247-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon SPW35N60CFDFKSA1.
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:34.1A; Drain Source Voltage Vds:600V; On Resistance Rds(on):118mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:313W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:34.1A; Current Id Max:34.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:313W; Power Dissipation Pd:313W; Power Dissipation Ptot Max:313W; Pulse Current Idm:85A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)34.1 A
Current34 A
Current Rating34 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance118 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.06 nF
Max Operating Temperature150 °C
Max Power Dissipation313 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance120 mΩ
Package Quantity240
Power Dissipation313 W
Rds On Max118 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time65 ns
Turn-On Delay Time20 ns
Voltage600 V
Voltage Rating (DC)600 V
Dimensions
Height21.1 mm
Length16.13 mm
Width5.21 mm