공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-12-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRL8114PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
STMicroelectronicsSTP160N3LL
N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
설명
유통업체에서 제공한 Infineon SPP80N03S2L-04에 대한 설명입니다.
80 A 30 V 0.0065 ohm N-CHANNEL Si POWER MOSFET TO-220AB
N-CH 30V 80A 3900mOhm TO220-3
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
SPP80N03S2L-04 I
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.9 nF
Max Operating Temperature175 °C
Max Power Dissipation188 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation188 W
Rds On Max4.2 mΩ
Rise Time20 ns
Turn-Off Delay Time54 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)30 V
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책