공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-03-31
LTD Date2020-09-30
관련 부품
InfineonSPP04N60C3XKSA1
Transistor: N-MOSFET; unipolar; 650V; 4.5A; 0.95ohm; 50W; -55+150 deg.C; THT; TO220
설명
유통업체에서 제공한 Infineon SPP04N50C3XKSA1에 대한 설명입니다.
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N, Coolmos, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:560V; On Resistance Rds(On):0.85Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance470 pF
Max Dual Supply Voltage500 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance950 mΩ
Package Quantity500
Power Dissipation50 W
Rise Time5 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time10 ns
Dimensions
Height20.7 mm
Length10.36 mm
Width4.57 mm