가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | SPN02N60C3 | 0 | 1 | 7h | ||||||||
| Microchip USA | SPN02N60C3 | 233 | 3500 | Tray | 6d | |||||||
| Win Source | WS-SPN02N60C3 | 36,600 | 145 | 8h | ||||||||
| Worldway Electronics | SPN02N60C3 | 10,166 | 7 | Tape & Reel | 7h | |||||||
| GreenTree Electronics | SPN02N60C3 | 11,600 | 23h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-06-30
LTD Date2010-12-31
관련 부품
InfineonBSP316PH6327XTSA1
Single P-Channel 100 V 1.8 Ohm 5.1 nC SIPMOS® Small Signal Mosfet - SOT-223
VishayIRFL9110TRPBF
IRFL9110TRPBF P-CHANNEL MOSFET TRANSISTOR, 0.69 A, 100 V, 3 + TAB-PIN SOT-223
설명
유통업체에서 제공한 Infineon SPN02N60C3에 대한 설명입니다.
Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223
400 mA 600 V N-CHANNEL Si SMALL SIGNAL MOSFET
MOSFET N-CH 650V 400MA SOT223-4
Power Field-Effect Transistor, 0.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, N, SOT-223; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:0.4A; On State Resistance:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOT-223; ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)400 mA
Current Rating400 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance200 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation1.8 W
Rds On Max2.5 Ω
Rise Time3 ns
Turn-Off Delay Time68 ns
Voltage Rating (DC)650 V