공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-04
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
STMicroelectronicsSTI33N65M2
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package
STMicroelectronicsSTFI31N65M5
N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in I2PAKFP package
STMicroelectronicsSTI21N65M5
N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in I2PAK package
설명
유통업체에서 제공한 Infineon SPI21N50C3XKSA1에 대한 설명입니다.
Cool MOS™ Power Transistor / Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-262 Tube
Power MOSFET, N Channel, 500 V, 21 A, 190 Milliohms, TO-262 (I2PAK), 3 Pins, Through Hole
Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Replacement for 500V CoolMOS™ C3 is CoolMOS™ P7.500V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.
MOSFET, N, 500V, I2-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:21A; Resistance, Rds On:0.19ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:I2-PAK; Termination Type:Through Hole; Current, Idm Pulse:63.0A; Power, Pd:208.0W; Voltage, Vds:500V; Voltage, Vds Max:500V
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)21 A
Current Rating11.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Dual Supply Voltage500 V
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance190 mΩ
Package Quantity500
Power Dissipation208 W
Rds On Max190 mΩ
Rise Time5 ns
Turn-Off Delay Time67 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)560 V
Dimensions
Height9.45 mm
Length10.36 mm
Width4.52 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책