Infineon SPD18P06PGBTMA1

MOSFET, P-CH, 60V, 18.6A, TO-252; Transistor Polarity:P Channel; Continuous Drai

Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Power Mosfet - DPAK

Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) DPAK T/R

SIPMOS POWER-TRANSISTOR Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

MOSFET, P-CH, 60V, 18.6A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C