공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-10-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonSPD03N50C3ATMA1
Trans MOSFET N-CH 500V 3.2A 3-Pin(2+Tab) DPAK T/R / Cool MOS Power Transistor
InfineonIPD60R1K5CEATMA1
N-Channel 600 V 3.1 A 1500 mO 9.4 nC CoolMOS CE Power Transistor - DPAK
InfineonIPD60R1K4C6ATMA1
28.4W(Tc) 20V 3.5V@ 90¦ÌA 9.4nC@ 10 V 1N 600V 1.4¦¸@ 1.1A,10V 3.2A 200pF@100V TO-252 2.56mm
설명
유통업체에서 제공한 Infineon SPD03N60S5BTMA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SPD03N60 600V COOLMOS N-CHANNEL POWER M;
Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)600 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance420 pF
Max Dual Supply Voltage600 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation38 W
Rds On Max1.4 Ω
Rise Time25 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time35 ns
Dimensions
Height2.49 mm