가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | S29GL512T11DHB020 | 3,051 | 13h | |||||||||
| Avnet | S29GL512T11DHB020 | 0 | 520 | 1d | ||||||||
| Future Electronics | S29GL512T11DHB020 | 0 | 520 | Tray | ||||||||
| Arrow Electronics | S29GL512T11DHB020 | 0 | 520 | |||||||||
| Microchip USA | S29GL512T11DHB020 | 2,885 | 150 | Tray | 3d |
설명
유통업체에서 제공한 Infineon S29GL512T11DHB020에 대한 설명입니다.
Parallel NOR Flash Memory, 512 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
Cypress Semiconductor SCT
NOR Flash 512Mbit 64M X 8bit/32M X 16bit Parallel 3V 110ns 64-Pin FBGA Tray
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110 ns 64-FBGA (9x9)
Active PARALLEL BALL AEC-Q100 ic memory 105C 2.7V 536870912bit 9mm
IC FLASH 512MBIT PARALLEL 64FBGA
S29GL512T - 512-Mbit (64 Mbyte),
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기술 사양
Physical
Number of Terminals64
Technical
Access Time110 ns
InterfaceParallel
Max Operating Temperature105 °C
Max Supply Current60 mA
Max Supply Voltage3.6 V
Memory TypeFLASH
Min Operating Temperature-40 °C
Min Supply Voltage2.7 V
Number of Circuits1
Operating Supply Voltage3 V
Temperature GradeIndustrial
Dimensions
Height - Seated (Max)1.4 mm
Length9 mm
Terminal Pitch1 mm
Width9 mm