Infineon ISZ0803NLSATMA1
$ 0.574
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2021-04-21
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2024-09-30
LTD Date2025-03-31
설명
유통업체에서 제공한 Infineon ISZ0803NLSATMA1에 대한 설명입니다.
MOSFET, N-CH, 100V, 37A, TSDSON; Available until stocks are exhausted Alternative available
Infineon N-Ch MOSFET OptiMOS 5, Vds=100V, 37A, PQFN 3x3, SMD, 8-Pin
Mosfet, N-Ch, 100V, 37A, Tsdson Rohs Compliant: Yes |Infineon ISZ0803NLSATMA1
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISZ0803NLS in the PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)37 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance16.9 mΩ
Drain to Source Voltage (Vds)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation43 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.1 W
Turn-Off Delay Time10 ns
Turn-On Delay Time5.6 ns
Dimensions
Height1 mm