설명
유통업체에서 제공한 Infineon ISC0804NLSATMA1에 대한 설명입니다.
MOSFET, N-CH, 100V, 59A, TDSON; Available until stocks are exhausted Alternative available
Power MOSFET, N Channel, 100 V, 59 A, 0.0103 ohm, TDSON, Surface Mount
Trans MOSFET N-CH 100V 12A 8-Pin TDSON EP T/R
MOSFET N-CH 100V 12A/59A TDSON-8 / N-Channel 100 V 12A (Ta), 59A (Tc) 2.5W (Ta), 60W (Tc) Surface Mount PG-TDSON-8
Power Field-Effect Transistor, 59A I(D), 100V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 100V, 59A, TDSON;
Infineon NChannelMOSTube OptiMOS 5series, Vds=100 V, 59 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin
MOSFET N-CH 100V 12A/59A TDSON-8
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The ISC0804NLS in SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)59 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10.9 mΩ
Drain to Source Voltage (Vds)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Turn-Off Delay Time12 ns
Turn-On Delay Time6.1 ns
Dimensions
Height1 mm