Infineon ISC0803NLSATMA1
$ 0.574
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2022-02-24
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2024-09-30
LTD Date2025-03-31
설명
유통업체에서 제공한 Infineon ISC0803NLSATMA1에 대한 설명입니다.
MOSFET, N-CH, 100V, 37A, TDSON; Available until stocks are exhausted Alternative available
Mosfet, N-Ch, 100V, 37A, Tdson Rohs Compliant: Yes |Infineon Technologies ISC0803NLSATMA1
Power MOSFET, N Channel, 100 V, 37 A, 0.016 ohm, TDSON, Surface Mount
Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON EP T/R
Power Field-Effect Transistor, 37A I(D), 100V, 0.0169ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 100V, 37A, TDSON;
Infineon NChannelMOSTube OptiMOS 5series, Vds=100 V, 37 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin
MOSFET N-CH 100V 8.8A/37A 8TDSON
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISC0803NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
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기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)37 A
Drain to Source Resistance16.9 mΩ
Drain to Source Voltage (Vds)100 V
Max Operating Temperature150 °C
Max Power Dissipation43 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1