Infineon ISC0603NLSATMA1
$ 0.706
Obsolete
설명
유통업체에서 제공한 Infineon ISC0603NLSATMA1에 대한 설명입니다.
Mosfet, N-Ch, 80V, 56A, Tdson Rohs Compliant: Yes |Infineon Technologies ISC0603NLSATMA1
Power MOSFET, N Channel, 80 V, 56 A, 0.0085 ohm, TDSON, Surface Mount
MOSFET, N-CH, 80V, 56A, TDSON; Available until stocks are exhausted
Power Field-Effect Transistor, 56A I(D), 80V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon NChannelMOSTube OptiMOS 5series, Vds=80 V, 56 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin
场效应管, MOSFET, N沟道, 80V, 56A, TDSON;
1 mm 2.5 W 1 4.8 ns 12 ns 150 °C -55 °C 8.5 mΩ
MOSFET N-CH 80V 12.3A/56A TDSON
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISC0603NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
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기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance8.9 mΩ
Drain to Source Voltage (Vds)80 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Turn-Off Delay Time12 ns
Turn-On Delay Time4.8 ns
Dimensions
Height1 mm