설명
유통업체에서 제공한 Infineon ISC011N06LM5ATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 60 V, 288 A, 1.15 Milliohms, TDSON-FL, 8 Pins, Surface Mount
Trans MOSFET N-CH 60V 37A 8-Pin TDSON EP T/R
Power Field-Effect Transistor, 288A I(D), 60V, 0.00115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon ISC011N06LM5ATMA1 MOSFET
Infineon NChannel EnhancedMOSTube ISCseries, Vds=60 V, 288 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin
MOSFET, N-CH, 60V, 288A, TDSON;
60V, 295A, 1.15MOHM, N-CHANNEL, SuperSO8 FL
The ISC011N06LM5, Infineon's OptiMOS™ MOSFET in the SuperSO8 package extends the OptiMOS™ 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
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기술 사양
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)288 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.15 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation188 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Turn-Off Delay Time78 ns
Turn-On Delay Time7 ns
Dimensions
Height1.1 mm