Infineon ISC010N04NM6ATMA1
$ 0.926
Production
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-01-18
Lifecycle StatusProduction (Last Updated: 2 months ago)
설명
유통업체에서 제공한 Infineon ISC010N04NM6ATMA1에 대한 설명입니다.
Transistor Power MOSFET N-Channel 40V 285A 8-Pin TDSON-FL T/R
MOSFET Devices; INFINEON; ISC010N04NM6ATMA1; 40 V; 40 A; 20 V; 3 W
Infineon NMOS ISC010N04NM6, Vds=40 V, 40 A, SuperSO8 5 x 6, , 8
Power Field-Effect Transistor, 285A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.2 mm 3 W 1 9.7 ns 27.8 ns 175 °C -55 °C 820 µΩ
With this best-in-class OptiMOSTM 6 power MSOFET 40V normal level, Infineon offers a benchmark solution for normal level (higher threshold voltage) required applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher Vth for the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on.In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the gate voltage spikes' peak, further contributing to the robustness against unwanted turn-on. The ISC010N04NM6 features very low RDS(on) of 1.0mOhm.
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- IR/INFINEON
- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)285 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.3 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Turn-Off Delay Time27.8 ns
Turn-On Delay Time9.7 ns
Dimensions
Height1.2 mm