Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 14-pin SOIC, Tube
Avnet Japan
Half Bridge Driver, Soft Turn-On, Single Input Plus Shut-Down, All high Voltage Pins on One Side, Programmable 540-5000ns Deadtime in a 14-Lead package
DRIVER, HALF BRIDGE, PROG DEADTIME; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:600mA; Input Delay:750ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:14; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:21094; I / O Delay:750ns; No. of Outputs:2; Output Sink Current:600mA; Output Source Current Max:290mA; Output Voltage:620V; Package / Case:SOIC; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD
600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High-side output in phase with HIN input; Logic and power ground +/- 5 V offset; Programmable up to 5 s with one external resistor; Lower di/dt gate driver for better noise immunity; Shutdown input turns off both channels