Infineon IRS21091SPBF

600 V half-bridge gate driver IC with shutdown and programmable deadtime, SOIC 8N, RoHS

Tube IRS21091SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 290mA 600mA 625mW

IRS21091 Series 20 V 200 mA Surface Mount High and Low Side Driver - SOIC-8

HALF BRIDGE DRIVER IN A 8-PIN SOIC PACKAGE | Infineon IRS21091SPBF

Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, Tube

MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC Tube

MOSFET DRIVER, HALF-BRIDGE, 8SOIC; Device Type:Half Bridge; Module Configuration:Half Bridge; Peak Output Current:600mA; Input Delay:750ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); I / O Delay:750ns; No. of Outputs:1; Output Current:600mA; Output Voltage:620V; Package / Case:SOIC; Power Dissipation Pd:625mW; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High-side output in phase with IN input; Logic and power ground +/- 5 V offset; Internal 500 ns deadtime, and programmable up to 5 s with one external RDT resistor; Lower di/dt gate driver for better noise immunity; The dual function DT/SD input turns off both channels